MOSFET Conduction Loss Calculator
Calculate MOSFET conduction loss from I, Rds(on), current definition (DC / on-interval RMS / full-cycle RMS), and optional Rds(Tj) via linear α or datasheet ratio. Runs locally in your browser.
Trust summary CVP VERIFIED · CVP protocol 1.0.0-proposed · Engineering assurance
- Input interpretation
- Enter values to calculate.
- Result
- —
- Assurance
- Engineering
- Declared partition coverage
- PASS · 4/4 declared partitions (dc, on_interval_rms, full_cycle_rms, invalid-domain) · Matrix
- Known limitations
- Conduction only — switching/Coss/Qrr excluded; temperature none in this CVP wave goldens
- Core CVP does not include live graph, viewport, or pointer interaction.
- Model
- MOSFET conduction loss and resistive VDS estimate from I, Rds(on) at Tref, current_basis, duty D when it applies, and optional Rds(Tj).
- Scope
- Constant Rds during on-time at the applied Rds_Tj.
- Verification
- Engine tested · Source checked · v1.2.2 · CVP VERIFIED · CVP protocol 1.0.0-proposed · Engineering assurance· View Manifest · CVP overview · Specification
- Versions
- Calculation 1.2.2 · CVP protocol 1.0.0-proposed
- CVP identity
- 8/8 property · digest 77fa2f728b57
- Legacy regression
- 32/32 tests · Production surface contract 12/12
- Reference
- O1 model · O2 expected_values · O2 numerical_behavior
- Interfaces
- PASS · UI (SSR) / REST / MCP
- Supplemental domain review
- Internal · Pass · electrical-engineer · 2026-08-14
- Named expert review
- Not performed
- CVP suite
- 3/3 golden · 13/13 CVP boundary · 13/13 invalid · 8/8 property · 2/2 cross-interface · 12/12 CVP contract · Manifest
- Sources
- IEC 60747-8 — Semiconductor devices — Discrete devices — Part 8: Field-effect transistors
- Infineon — OptiMOS device selection for synchronous rectification
- Texas Instruments SSZTB57 — How to Minimize MOSFET Conduction Loss in Battery-Powered Applications
- Erickson & Maksimović — Fundamentals of Power Electronics
- NIST Guide to the SI (SP 811)
- Evidence
- 7 legacy golden · 13 legacy boundary · legacy regression suite · 3/3 oracle-backed golden · 13/13 invalid · Artifact integrity PASS · CalculatorX electrical review (EE-001)
- Semantic contract
- PASS
Full verification
Formulas
Core equations used by this calculator.
How to use
Choose the current definition
DC for continuous conduction. On-interval RMS if I is the current while the FET is on. Full-cycle MOSFET RMS if I already includes off-time (typical datasheet / vendor I_RMS).
Enter current I and Rds(on)
Enter datasheet Rds(on) at Tref (usually 25 °C) and your Vgs. Optionally open Advanced to scale to junction temperature.
Enter duty D only for on-interval RMS
D = ton/T. Hidden for DC and full-cycle RMS so duty cannot be double-counted.
Optional — Rds(Tj)
Linear: Rds·(1+α·(Tj−Tref)) with planning default α=0.006 /°C. Ratio: paste Rds(Tj)/Rds(Tref) from the datasheet curve.
Example calculations
Common configurations with formula and result.
DC 10 A · 50 mΩ
current_basis = dc · I = 10 A · Rds = 0.05 Ω
On-interval PWM 50%
Same 10 A on-state RMS · D = 0.5
Full-cycle RMS of the same PWM
I_mos,rms = 10√0.5 ≈ 7.071 A · current_basis = full_cycle_rms
Hot 100 °C · ratio 1.44
Same 10 A DC · 50 mΩ @ 25 °C · rds_ratio = 1.44
Illustrative conduction loss
Common values at a glance.
| current_basis | I | Rds(on) | D | P_cond |
|---|---|---|---|---|
| dc | 10 A | 50 mΩ | 1 | 5 W |
| on_interval_rms | 10 A | 50 mΩ | 0.5 | 2.5 W |
| full_cycle_rms | 7.071 A | 50 mΩ | — | 2.5 W |
| dc + ratio 1.44 | 10 A | 50→72 mΩ | 1 | 7.2 W |
MOSFET Conduction Loss calculator specification
Version 1.2.2 · Engine tested · Supplemental domain review · Internal · 2026-08-14
- Engine tested 32/32 tests · Production surface contract 12/12
- Supplemental domain review Internal · Pass · electrical-engineer · 2026-08-14
- Named expert review Not performed
- Calculation version 1.2.2
Review policy · Evidence · Reviewed by CalculatorX electrical review (EE-001) (electrical-engineer)
- Definition
- MOSFET conduction loss is the average power dissipated in Rds(on) at the applied temperature. If I is RMS during the ON interval, P = I_on,rms² · Rds_Tj · D. If I is MOSFET RMS over the full period, P = I_mos,rms² · Rds_Tj and D must not be applied again. DC is the D = 1 case. Rds_Tj may be the entered Rds, a linear α·ΔT scale, or a datasheet ratio.
- What it calculates
- MOSFET conduction loss and resistive VDS estimate from I, Rds(on) at Tref, current_basis, duty D when it applies, and optional Rds(Tj).
- Inputs
- I > 0 (A) — current; meaning set by current_basis
- Rds > 0 (Ω) — on-resistance at Tref in SI ohms
- current_basis — required: dc | on_interval_rms | full_cycle_rms. The engine will not infer what I means.
- D optional in (0, 1] — used only for on_interval_rms; default 1
- temperature_model — none (default) | linear | ratio; omitted infers ratio if rds_ratio is set (ratio wins even when Tj_C/alpha_per_C are also present), else linear if Tj_C or alpha_per_C is set, else none
- Tj_C — required for linear
- Tref_C — default 25
- alpha_per_C — linear coefficient; default 0.006 /°C (Si planning default) with warning RDS_TEMP_COEFF_DEFAULT
- rds_ratio > 0 — required for ratio; datasheet Rds(Tj)/Rds(Tref)
- Outputs
- P_W — conduction loss at Rds_Tj (W)
- V_drop — I·Rds_Tj at entered current (V)
- Rds_Tj — Rds used in P_W (equals Rds when temperature_model=none)
- P_W_ref, V_drop_ref — Tref comparison when a temperature model is applied
- Echoed I, Rds, D, current_basis, temperature_model, rds_ratio
- Formula
on_interval_rms: P_W = I² × Rds_Tj × D; dc and full_cycle_rms: P_W = I² × Rds_Tj; V_drop = I × Rds_Tj; linear Rds_Tj = Rds·(1+α·(Tj−Tref)); ratio Rds_Tj = Rds·rds_ratio- Assumptions
- Constant Rds during on-time at the applied Rds_Tj.
- current_basis is the contract for what I means; the engine will not guess a waveform factor.
- No switching, Coss, or gate-drive loss.
- Rds(Tj) is first-order linear or a datasheet ratio — not a physics compact model.
- Default α = 0.006 /°C is a Si MOSFET planning default, not manufacturer validated.
- Units
- A, Ω, °C → W, V
- Boundary conditions
- Missing I/Rds/current_basis → MISSING_REQUIRED_INPUT
- ≤ 0 → VALUE_MUST_BE_POSITIVE
- Non-finite → INVALID_NUMBER
- D not in (0, 1] → FRACTION_OUT_OF_RANGE
- Unknown current_basis or temperature_model → INVALID_MODE
- linear without Tj_C, or ratio without rds_ratio → MISSING_REQUIRED_INPUT
- D supplied with dc or full_cycle_rms → warning DUTY_NOT_APPLICABLE; D not applied
- Explicit none with Tj/α/ratio present → warning TEMPERATURE_NOT_APPLIED
- linear with omitted α → warning RDS_TEMP_COEFF_DEFAULT (α=0.006 /°C)
- ratio with α also supplied → warning ALPHA_IGNORED_WHEN_RATIO
- Rds(Tj)/Rds(Tref) outside 0.5–2.5 → warning RDS_TEMP_FACTOR_OUTSIDE_TYPICAL
- Example
- current_basis=dc, I=10, Rds=0.05, rds_ratio=1.44 → P_W=7.2, Rds_Tj=0.072, P_W_ref=5
- Validation cases
9 published on this page · 32/32 tests · Production surface contract 12/12 · View evidence
- current_basis=dc, I=10, Rds=0.05 → P_W=5, V_drop=0.5, D=1, temperature_model=none
- current_basis=on_interval_rms, I=10, Rds=0.05, D=0.5 → P_W=2.5
- current_basis=full_cycle_rms, I=7.0710678118654755, Rds=0.05 → P_W=2.5
- current_basis=full_cycle_rms, I=7.0710678118654755, Rds=0.05, D=0.5 → P_W=2.5 (D ignored)
- current_basis=dc, I=10, Rds=0.05, rds_ratio=1.44 → P_W=7.2, Rds_Tj=0.072, P_W_ref=5
- current_basis=dc, I=10, Rds=0.05, temperature_model=linear, Tj_C=100, alpha_per_C=0.006 → P_W=7.25, Rds_Tj=0.0725
- I=10, Rds=0.05 (no current_basis) → error MISSING_REQUIRED_INPUT
- current_basis=peak → error INVALID_MODE
- current_basis=dc, temperature_model=arrhenius → error INVALID_MODE
- Sources
- IEC 60747-8 — Semiconductor devices — Discrete devices — Part 8: Field-effect transistors — Drain-source on-state resistance RDS(on)Supports: RDS(on) as the on-state resistance used in conduction-loss estimates
- Infineon — OptiMOS device selection for synchronous rectification — Conduction losses P_cond = I_RMS² × RDS(on) · accessed 2026-08-14Supports: Vendor conduction-loss model using MOSFET RMS current (not converter output current) without an extra duty factor
- Texas Instruments SSZTB57 — How to Minimize MOSFET Conduction Loss in Battery-Powered Applications — P_cond = I_RMS² × RDS(on) · accessed 2026-08-14Supports: Official TI conduction-loss formula using MOSFET RMS current
- Erickson & Maksimović — Fundamentals of Power Electronics — Conduction loss in semiconductor switchesSupports: I_rms of the switch current over the period; equivalent to on-interval RMS × √D for rectangular current
- NIST Guide to the SI (SP 811) — SI units for current, resistance, and power · accessed 2026-08-14Supports: A, Ω, W relationships
- IEC 60747-8 — Semiconductor devices — Discrete devices — Part 8: Field-effect transistors — Drain-source on-state resistance RDS(on)
- Last reviewed
- 2026-08-14
- Reviewed by
- CalculatorX electrical review (EE-001) (electrical-engineer)
- Calculation version
- 1.2.2
Background
Interpretation and common distinctions.
Calculate MOSFET conduction loss with an explicit current-basis contract so RMS current and duty cycle are not double-counted, plus an optional Rds(Tj) correction.
Default example: DC 10 A · 50 mΩ @ 25 °C → P = 5 W, VDS estimate = 0.5 V.
Same rectangular PWM, two correct inputs:
- On-interval RMS 10 A, D = 0.5 → 2.5 W
- Full-cycle MOSFET RMS 10√0.5 ≈ 7.071 A → 2.5 W
Entering 7.071 A and D = 0.5 as if both applied would understate loss (1.25 W). Full-cycle RMS ignores D.
Hot Rds example: same 10 A DC · 50 mΩ @ 25 °C · datasheet ratio 1.44 → Rds_Tj = 72 mΩ → P @ Tj = 7.2 W (P @ 25 °C remains 5 W). Linear α = 0.006 /°C at 100 °C gives 72.5 mΩ / 7.25 W.
Supported and not supported
Supported
current_basis:dc|on_interval_rms|full_cycle_rmstemperature_model:none|linear|ratio- Conduction loss and resistive VDS estimate at Rds_Tj
- API / MCP via
electrical.mosfet.conduction_loss
Not supported
- Switching loss / Eon·Eoff
- Physics compact models or manufacturer-validated α
- Body-diode reverse recovery
- Parallel FET current sharing
- Waveform-factor inference from peak / average current
Agent / API notes
Capability id: electrical.mosfet.conduction_loss · tool id: mosfet-conduction-loss · pin calculation_version: 1.2.2.
current_basis is required (v1.2.1+). Omitting it returns MISSING_REQUIRED_INPUT — the engine will not guess whether I is DC, ON-interval RMS, or full-cycle MOSFET RMS. Input/output schemas are generated from the same required list and calculation_version. Share URLs store canonical Rds in ohms; display milliohms are UI state.
Omitting temperature_model infers ratio if rds_ratio is set (ratio wins even when Tj_C or alpha_per_C is also present), else linear if Tj_C or alpha_per_C is set, else none. Prefer sending temperature_model=ratio with a datasheet rds_ratio over the linear planning α.
Stable error codes: MISSING_REQUIRED_INPUT, INVALID_NUMBER, VALUE_MUST_BE_POSITIVE, FRACTION_OUT_OF_RANGE, INVALID_MODE.
Warning codes: DUTY_NOT_APPLICABLE, VDS_AT_ENTERED_CURRENT, TEMPERATURE_NOT_APPLIED, RDS_TEMP_COEFF_DEFAULT, ALPHA_IGNORED_WHEN_RATIO, RDS_TEMP_FACTOR_OUTSIDE_TYPICAL.
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Frequently asked questions
Key distinctions behind the calculation.
What is MOSFET conduction loss?
Average power lost to Rds(on) while the FET conducts. Switching, Coss, gate-drive, and reverse-recovery losses are separate.
Should I use peak, on-interval RMS, or full-cycle RMS?
Never use peak alone. If I is RMS during the ON interval, choose on-interval RMS and enter D. If I is the MOSFET current RMS over the whole period (the usual vendor I_RMS), choose full-cycle MOSFET RMS and do not enter D — P = I_rms² · Rds. Mixing full-cycle RMS with D understates loss by about D (½ at 50% duty).
What is duty cycle D?
D = ton/T, the fraction of the period the device is on (0 < D ≤ 1). It is applied only for on-interval RMS. For DC and full-cycle RMS the calculator forces D = 1 in the power formula.
Why is VDS estimate not always VDS(on)?
The calculator reports I × Rds at the current you entered. For DC that is the on-state drop. For an RMS current it is a resistive drop at that RMS value, not a particular instant of vDS(t).
Does this include temperature effects on Rds?
Optionally. Leave temperature_model at none to use Rds as entered. Prefer Datasheet ratio (Recommended): Rds·rds_ratio from the normalized Rds(on) vs Tj curve. Linear estimate is a planning approximation Rds·(1+α·(Tj−Tref)); default α=0.006 /°C is a Si planning default, not manufacturer validated. The primary result is P at Rds_Tj; P at Tref is shown for comparison.
What if I, Rds, or current_basis is missing or zero?
The calculator and API reject the request with MISSING_REQUIRED_INPUT or VALUE_MUST_BE_POSITIVE. From v1.2.1, current_basis is required — the engine will not guess what I means. Unknown current_basis or temperature_model returns INVALID_MODE. linear without Tj_C and ratio without rds_ratio also return MISSING_REQUIRED_INPUT.
Is switching loss included?
No. This probe is conduction only. Use MOSFET Total Loss to compose conduction + switching + gate + Coss + Qrr, or the MOSFET Switching Loss calculator for the hard-switching term alone.